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1N5064 0T502 05000 AT24LC02 MN188321 BGD906MI 2SJ387 01900
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  Datasheet File OCR Text:
 SMD Type
Transistors IC
PNP Epitaxial Planar Silicon Transistors 2SA1607
SOT-23
Unit: mm
Features
Fast switching speed.
+0.1 2.4-0.1
+0.1 2.9-0.1 +0.1 0.4-0.1
Low saturation voltage.
1
+0.1 0.95-0.1 +0.1 1.9-0.1
+0.1 1.3-0.1
High gain-bandwidth product.
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating -40 -20 -5 -150 -300 -30 200 150 -55 to +150 Unit V V V mA mA mA mW
+0.1 0.38-0.1
0-0.1
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1
SMD Type
2SA1607
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Delay time Rise time Storage time Fall time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = -30V, IE=0 VEB = -4V, IC=0 VCE = -1V , IC = -10mA VCE = -10V , IC = -10mA VCB = -10V , f = 1.0MHz
Transistors IC
Min
Typ
Max -0.1 -0.1
Unit iA iA
60 400 2.9 -0.07 -0.75 -40 -20 -5 14 11 80 16
180 MHz pF -0.2 -1 V V V V V 20 20 180 25 ns ns ns ns
VCE(sat) IC = -10mA , IB = -1mA VBE(sat) IC = -10mA , IB = -1mA V(BR)CBO IC = -10iA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10iA , IC = 0 td tr tstg tf
hFE Classification
Marking Rank hFE 60 3 120 90 YL 4 180
2
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